18 mΩ @ 9A,10V,9 mΩ @ 9A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

series

OptiMOS™

Part status

Final sale

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerVDFN

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

4.8A(Ta),7.6A(Ta)

On resistance (maximum) for different Ids and Vgs

18 mΩ @ 9A,10V,9 mΩ @ 9A,10V

Vgs (th) (maximum) for different Ids

2V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

3nC @ 4.5V,6.4nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

340pF @ 15V,730pF @ 15V

FET function

Logic level gate,4.5V drive

Reset