7.4 mΩ @ 10A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

40V

Current at 25 ° C - continuous drain (Id)

14A(Ta),52A(Tc)

On resistance (maximum) for different Ids and Vgs

7.4 mΩ @ 10A,10V

Vgs (th) (maximum) for different Ids

2.2V @ 30µA

Gate charge (Qg) at different Vgs (maximum)

16nC @ 10V

7nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

997pF @ 25V

FET function

standard