8-SOIC(0.154,3.90mm wide)PowerTrench®13 mΩ @ 7.5A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 2

FDS6910

Brand：ON

Stock：17658

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 7.5A 8SOIC

Price：1+

￥1.64

FDS6911

Brand：ON

Stock：30888

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 20V 7.5A 8SOIC

Price：1+

￥1.94

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

TR,CT,bulk

series

PowerTrench®

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

30V

20V

Current at 25 ° C - continuous drain (Id)

7.5A

On resistance (maximum) for different Ids and Vgs

13 mΩ @ 7.5A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

24nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1130pF @ 15V

FET function

Logic level gate

Reset