150°C(TJ)Logic level gate50 mΩ @ 2.5A,4V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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Category

FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

series

Part status

stop production

working temperature

150°C(TJ)

Encapsulation/Housing

8-SOIC(0.173,4.40mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

20V

Current at 25 ° C - continuous drain (Id)

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 2.5A,4V

Vgs (th) (maximum) for different Ids

1.2V @ 200µA

Gate charge (Qg) at different Vgs (maximum)

9.5nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

780pF @ 10V

FET function

Logic level gate

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