stop production-40°C ~ 125°C(TJ)Stand aloneIGBT,N Channel MOSFET-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

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Gate driver

Total: 10

Brand：Microchip

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 14SOIC

Brand：Microchip

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 14SOIC

Brand：Microchip

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 14SOIC

Price：1+

￥2.21

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8SO

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8SO

Price：1+

￥1.12

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDG 8MINIDIP

Price：1+

￥1.44

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8DIP

Price：1+

￥1.44

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 10DFN

Price：1+

￥0.62

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 10DFN

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 10DFN

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

Through-Hole

packing

TR

pipe

pipe

TR,TR,CT

TR,TR,CT,bulk

series

Part status

stop production

Voltage - Supply

10V ~ 20V

17V(max)

working temperature

-40°C ~ 125°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-DIP(0.300,7.62mm)

14-SOIC(0.154,3.90mm wide)

10-VFDFN Exposed Pad

10-VDFN Exposed Pad

Drive configuration

half-bridge

Channel type

Stand alone

Number of drives

2

Grid type

IGBT,N Channel MOSFET

Logic voltage - VIL, VIH

0.8V,2.3V

0.8V,2.2V

1.1V,1.8V

Current peak output (in, out)

250mA,500mA

1A,1A

400mA,650mA

Input Type

Non-inverting

Anticorrelation

High voltage side voltage - maximum (bootstrap)

600 V

200 V

Rise/fall time (typical value)

85ns,35ns

70ns,40ns

31ns,31ns

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