0.8V,2V-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

Microchip

Infineon

ADI

Installation type

Surface mount

Through-Hole

Surface mount,Wettable wings

packing

bulk

pallet

TR,CT

pipe

TR,CT,bulk

TR,bulk

belt

series

Automotive, AEC-Q100

Automotive, AEC-Q100, FLEXMOS™

Part status

On sale

stop production

Voltage - Supply

4.5V ~ 5.5V

4.75V ~ 5.25V

5V ~ 18V

4.5V ~ 28V

5V ~ 35V

5V ~ 12V

4.5V ~ 16V

4.5V ~ 18V

10V ~ 20V

5.5V ~ 20V

25V(max)

4.6V ~ 13.2V

7V ~ 20V

9.5V ~ 18V

4.15V ~ 6V

4.15V ~ 7.5V

4.5V ~ 6.5V

8V ~ 14V

4.6V ~ 6V

10V ~ 13.5V

4.15V ~ 13.2V

4.6V ~ 5.5V

4V ~ 16V

12.5V ~ 20V

5V ~ 54V

6V ~ 16V

2.75V ~ 30V

12V ~ 36V

11V ~ 50V

14.5V ~ 15.5V

4V ~ 14V

9V ~ 24V

8V ~ 48V

5V ~ 30V

4.5V ~ 17V

8V ~ 12.6V

10V ~ 15V

4V ~ 15.5V

5V ~ 20V

11.5V ~ 20V

5.5V ~ 60V

14V ~ 18V

4.75V ~ 5.25V,4.75V ~ 24V

9V ~ 14V

4.7V ~ 18V

4.75V ~ 28V

5.5V ~ 65V

4.7V ~ 15V

7V ~ 28V

4V ~ 7V

4.4V ~ 45V

working temperature

-40°C ~ 85°C(TA)

-25°C ~ 85°C(TA)

0°C ~ 70°C(TA)

-40°C ~ 125°C(TA)

-40°C ~ 125°C

-40°C ~ 150°C(TA)

-40°C ~ 150°C(TJ)

-40°C ~ 125°C(TJ)

-55°C ~ 125°C

-30°C ~ 125°C(TJ)

-40°C ~ 85°C(TJ)

0°C ~ 125°C(TJ)

-55°C ~ 150°C(TJ)

-25°C ~ 150°C(TJ)

0°C ~ 150°C(TJ)

-40°C ~ 140°C(TJ)

-50°C ~ 150°C(TJ)

-40°C ~ 175°C(TJ)

125°C(TJ)

-20°C ~ 150°C(TJ)

-10°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-SOIC(0.209,5.30mm wide)

8-VDFN Exposed Pad

8-WDFN Exposed Pad

16-SOIC(0.295,7.50mm wide)

20-TSSOP(0.173,4.40mm wide)

32-LQFP

20-SOIC(0.295,7.50mm wide)

20-DIP(0.300,7.62mm)

28-SOIC(0.295,7.50mm wide)

16-DIP(0.300,7.62mm)

16-SOIC(0.154,3.90mm wide)

14-TSSOP(0.173,4.40mm wide)

32-VFQFN Exposed Pad

48-VFQFN Exposed Pad

64-TQFP Exposed Pad

28-DIP(0.600,15.24mm)

24-SOIC(0.295,7.50mm wide)

8-DIP(0.300,7.62mm)

8-VFDFN Exposed Pad

SOT-23-6

14-SOIC(0.154,3.90mm wide)

10-VFDFN Exposed Pad

8-TSSOP,8-MSOP(0.118,3.00mm wide)

18-SOIC(0.295,7.50mm wide)

18-DIP(0.300,7.62mm)

14-DIP(0.300,7.62mm)

20-WFQFN Exposed Pad

24-VFQFN Exposed Pad

24-SSOP(0.209,5.30mm wide)

48-PowerTQFP

64-BQFP

24-DIP(0.300,7.62mm)

8-WFDFN Exposed Pad

SC-74A,SOT-753

6-WDFN Exposed Pad

10-TFSOP,10-MSOP(0.118,3.00mm wide)

12-WQFN Exposed Pad

10-WFDFN Exposed Pad

8-SOIC(0.154,3.90mm wide)Exposed Pad

8-TSSOP,8-MSOP(0.118,3.00mm wide)Exposed Pad

8-CDIP(0.300,7.62mm)

8-VFDFN Exposed Pad,CSP

TO-220-5

6-VDFN Exposed Pad

8-VFDFN Exposed Pad,8-MLF®

10-WDFN Exposed Pad

32-TQFP Exposed Pad

44-LCC(Jfeedthrough),32 feedthrough

Drive configuration

low side

High terminal

half-bridge

High pressure side or low pressure side

High pressure sideand Low voltage side

Channel type

one way

Stand alone

synchronization

3-phase

Number of drives

Grid type

N Channel MOSFET

IGBT,N Channel MOSFET

IGBT

N Channel,P Channel MOSFET

IGBT,N Channel,P Channel MOSFET

Logic voltage - VIL, VIH

0.8V,2V

Current peak output (in, out)

10.6A,11.4A

5A,5A

1A,2A

1.5A,1.5A

3A,3A

250mA,500mA

2.5A,2.8A

1.5A,2A

4A,4A

4.5A,4.5A

2A,3A

6A,6A

500mA,1A

3A,3.2A

1A,1A

8A,8A

2A,2A

1A,900mA

3.5A,-

500mA,500mA

2A,-

9A,9A

12A,12A

3A,7A

2A,4A

4A,8A

350mA,200mA

350mA,540mA

1.6A,1.6A

750mA,1.5A

24µA,2.2mA

1.2A,1A

Input Type

Non-inverting

Anticorrelation

Phase reversal Non-inverting

High voltage side voltage - maximum (bootstrap)

35 V

600 V

30 V

118 V

1200 V

25 V

26 V

180 V

41 V

42 V

56 V

125 V

175 V

60 V

650 V

105 V

Rise/fall time (typical value)

23ns,19ns

12ns,9ns

16ns,11ns

25ns,20ns

19ns,13ns

19ns,17ns

15ns,10ns

25ns,15ns

20ns,11ns

13ns,9ns

12ns,12ns

25ns,25ns

277ns(max),277ns(max)

20ns,20ns

8ns,14ns

15ns,15ns

14ns,11ns

18ns,10ns

1.4µs,1.4µs(max)

30ns,25ns

20ns,15ns

35ns,35ns

10ns,10ns

11.5ns,10ns

400ns,400ns

13ns,12ns

9.5ns,9ns

18ns,18ns

22ns,22ns

40ns,28ns

700ns,500ns

28ns,13ns

42ns,30ns

90ns,40ns

130ns,120ns

50ns,40ns

65ns,65ns

130ns,60ns

20ns,16ns

22ns,16ns

36ns,17ns

25ns,14ns

24ns,7ns

80ns,25ns

600ns,600ns

85ns,85ns

27ns,21ns

17ns,10ns

5ns,7ns

Reset