IGBT,N Channel MOSFET--Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

packing

TR,CT

TR,CT,bulk

series

Automotive, AEC-Q100

Part status

On sale

Voltage - Supply

10V ~ 20V

5V ~ 20V

working temperature

-40°C ~ 125°C(TA)

-40°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

14-SOIC(0.154,3.90mm wide)

Drive configuration

half-bridge

High pressure sideand Low voltage side

Channel type

Stand alone

Number of drives

2

Grid type

IGBT,N Channel MOSFET

Logic voltage - VIL, VIH

0.8V,2.5V

0.8V,3V

1.1V,1.7V

Current peak output (in, out)

210mA,360mA

200mA,350mA

CB,cCSAus,CE,CQC,TUV

Input Type

-

High voltage side voltage - maximum (bootstrap)

600 V

20 V

Rise/fall time (typical value)

100ns,50ns

100ns,35ns

130ns,50ns