600 VIGBT,N Channel,P Channel MOSFET-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

Select Gate driver

Home

Category

Gate driver

Total: 1

Brand

Microchip

Infineon

ADI

Installation type

Surface mount

packing

TR,CT

series

Part status

stop production

Voltage - Supply

10V ~ 20V

working temperature

-40°C ~ 125°C(TJ)

Encapsulation/Housing

28-SOIC(0.295,7.50mm wide)

Drive configuration

half-bridge

Channel type

3-phase

Number of drives

Grid type

IGBT,N Channel,P Channel MOSFET

Logic voltage - VIL, VIH

0.8V,2.2V

Current peak output (in, out)

1A,1A

Input Type

Non-inverting

High voltage side voltage - maximum (bootstrap)

600 V

Rise/fall time (typical value)

20ns,20ns

Reset