IGBT,N Channel MOSFET600 V25ns,25ns-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

packing

TR

TR,CT

pipe

series

Automotive, AEC-Q100

Part status

On sale

stop production

Voltage - Supply

10V ~ 20V

10V ~ 22V

working temperature

-40°C ~ 125°C(TA)

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

16-SOIC(0.154,3.90mm wide)

14-SOIC(0.154,3.90mm wide)

Drive configuration

High terminal

half-bridge

High pressure side or low pressure side

Channel type

Stand alone

Number of drives

1

2

Grid type

IGBT,N Channel MOSFET

Logic voltage - VIL, VIH

0.8V,2.5V

1.2V,2.5V

0.6V,3.5V

Current peak output (in, out)

4.5A,4.5A

500mA,500mA

Input Type

Non-inverting

High voltage side voltage - maximum (bootstrap)

600 V

Rise/fall time (typical value)

25ns,25ns