Total: 252
TI
ON
Microchip
ST
Infineon
ADI
Surface mount
Surface mount,Wettable wings
TR,CT
Automotive, AEC-Q100
OptiMOS™
EiceDriver™
EiceDRIVER™
On sale
4.5V ~ 5.5V
3V ~ 5.5V
5V ~ 18V
4.5V ~ 28V
5.5V ~ 16V
4.5V ~ 13.2V
5V ~ 12V
4.5V ~ 15V
4.5V ~ 16V
4.5V ~ 18V
11V ~ 20V
4.5V ~ 20V
10V ~ 20V
6.1V ~ 18V
20V
7.5V ~ 16V
9V ~ 17V
8V ~ 16V
8.5V ~ 20V
12V ~ 20V
10V ~ 22V
9V ~ 18V
13V ~ 20V
9.5V ~ 18V
8V ~ 14V
17V(max)
12.5V ~ 20V
10V ~ 18V
4.5V ~ 13V
5V ~ 10V
5.25V ~ 16V
4V ~ 14V
9V ~ 24V
8V ~ 48V
4V ~ 15V
7.2V ~ 13.5V
4.5V ~ 13.5V
140V
6V ~ 20V
3.3V ~ 20V
5V ~ 20V
11.5V ~ 20V
10V ~ 25V
10V ~ 17.5V
4.2V ~ 11V
8V ~ 17V
4.25V ~ 16V
9V ~ 14V
3.5V ~ 14V
4.25V ~ 15V
7V ~ 17V
4.75V ~ 5.25V,6V ~ 18V
4.25V ~ 26V
4.5V ~ 26V
0°C ~ 70°C
-40°C ~ 85°C(TA)
0°C ~ 70°C(TA)
-40°C ~ 125°C(TA)
-40°C ~ 125°C
-40°C ~ 150°C(TJ)
-40°C ~ 125°C(TJ)
-40°C ~ 105°C(TJ)
-55°C ~ 125°C(TA)
150°C(TJ)
-20°C ~ 125°C(TJ)
0°C ~ 125°C(TJ)
-55°C ~ 150°C(TJ)
0°C ~ 150°C(TJ)
-40°C ~ 140°C(TJ)
125°C(TJ)
8-SOIC(0.154,3.90mm wide)
8-VDFN Exposed Pad
8-WDFN Exposed Pad
16-SOIC(0.295,7.50mm wide)
20-SOIC(0.295,7.50mm wide)
16-SOIC(0.154,3.90mm wide)
14-SOIC(0.154,3.90mm wide)
10-VFDFN Exposed Pad
8-TSSOP,8-MSOP(0.118,3.00mm wide)
16-VQFN Exposed Pad
24-SSOP(0.209,5.30mm wide)
16-VFQFN Exposed Pad
8-WFDFN Exposed Pad
10-WFDFN Exposed Pad
8-SOIC(0.154,3.90mm wide)Exposed Pad
8-PowerTSSOP,8-MSOP(0.118,3.00mm wide)
8-PowerSOIC(0.154,3.90mm wide)
14-TSSOP(0.173,4.40mm wide)Exposed Pad
8-TSSOP,8-MSOP(0.118,3.00mm wide)Exposed Pad
16-SSOP(0.154,3.90mm wide)
12-TSSOP(0.118,3.00mm wide)Exposed Pad
12-VQFN Exposed Pad
10-UFDFN Exposed Pad
39-QFN
10-WDFN Exposed Pad
15-VFQFN
8-VDFN Exposed Pad,8-MLF®
13-TFLGA
16-VFQFN Exposed Pad,14 feedthrough
24-TSSOP(0.154,3.90mm wide)Exposed Pad
10-VFDFN Exposed Pad,9 feedthrough
19-WFQFN Exposed Pad
low side
High terminal
half-bridge
High pressure side or low pressure side
High pressure sideand Low voltage side
Full bridge
Stand alone
1
2
-
4
N Channel MOSFET
IGBT,N Channel MOSFET
IGBT
N Channel,P Channel MOSFET
IGBT,N Channel,P Channel MOSFET
IGBT,SiC MOSFET
0.8V,2V
1V,2V
0.8V,2.6V
0.8V,2.3V
1.2V,1.8V
2V,1.8V
0.8V,2.5V
0.8V,2.9V
1.2V,2.5V
1.3V,2.5V
0.8V,2.7V
6V,9.5V
0.9V,2.4V
6V,14V
0.8V,2.2V
1.1V,1.9V
1V,2.3V
1.45V,2V
1.1V,1.8V
0.8V,2.4V
0.3V,1.2V
0.8V,3V
3V,8V
0.8V,1.5V
0.3V,1.7V
0.65V,1.4V
0.8V,2.1V
2V,4.25V
1.7V,2.2V
1.85V,3.25V
0.7V,2.3V
1.1V,1.7V
-,1.65V
1.1V,1.98V
0.7V,2.1V
1.3V,1.9V
2.3V,-
1.16V,2.08V
1.3V,2.7V
1.6V,2.3V
2.4V,5.9V
1.2V,2.7V
1.3V,2.4V
5A,5A
1A,2A
1.5A,1.5A
3A,3A
250mA,500mA
10A,10A
3A,6A
350mA,650mA
4A,4A
2.5A,2.5A
90mA,180mA
4.5A,4.5A
2A,3A
1.9A,2.3A
4.3A,4.3A
2A,2.5A
1A,1A
2A,2A
290mA,430mA
400mA,650mA
500mA,500mA
1.2A,1.2A
1.5A,1A
2A,4A
2.5A,3A
4A,8A
290mA,600mA
2.3A,3.3A
210mA,360mA
60mA,130mA
200mA,350mA
CB,cCSAus,CE,CQC,TUV
2.3A,2.3A
1.8A,2.3A
3.5A,3.5A
300mA,300mA
90A,70A
3A,5A
1.3A,1.4A
1.6A,1.6A
1.2A,5A
2.5A,3.5A
1.5A,3A
1.5A,4A
Non-inverting
600 V
100 V
200 V
670 V
118 V
1200 V
800 V
15 V
500 V
36 V
108 V
114 V
650 V
675 V
90 V
120 V
23ns,19ns
12ns,9ns
25ns,20ns
36ns,32ns
85ns,35ns
4ns,4ns
15ns,10ns
6ns,4ns
50ns,30ns
40ns,20ns
230ns,90ns
8ns,8ns
60ns,30ns
2ns,1.5ns
8ns,7ns
13ns,8ns
40ns,25ns
12ns,12ns
25ns,25ns
70ns,30ns
10ns,15ns
20ns,20ns
15ns,15ns
20ns,15ns
75ns,35ns
70ns,40ns
45ns,35ns
6ns,6ns
20ns,18ns
10ns,10ns
11ns,11ns
35ns,25ns
15ns,18ns
23ns,25ns
28ns,32ns
14ns,13ns
19ns,19ns
7ns,7ns
30ns,30ns
20ns,29ns
15ns,13.5ns
42ns,30ns
16ns,16ns
8ns,5ns
18ns,14ns
100ns,50ns
100ns,35ns
80ns,40ns
25ns,17ns
5.3ns,4.5ns
200ns,100ns
150ns,50ns
130ns,50ns
70ns,35ns
22ns,18ns
6.5ns,4.5ns
48ns,37ns
24ns,7ns
48ns,24ns
60ns,35ns(max)
3ns,3ns
5.5ns,5.5ns
45ns,45ns
600ns,600ns
14ns,12ns
430ns,260ns
990ns,715ns
7ns,6ns
570ns,430ns
12ns,10ns
7.2ns,5.5ns
7ns,3.5ns
7.8ns,6ns
500ps,500ps
6ns,10ns