On sale14-VFQFN Exposed PadIGBT,N Channel MOSFET-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

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Gate driver

Total: 4

IRS2008MPBFAUMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：LEVEL SHIFT JUNCTION ISO

IRS2008MTRPBFXUMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：IC 200V HB GATE DRIVER 14VQFN

Price：1+

￥1.16

IRS2007MTRPBFXUMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：IC 200V HB GATE DRIVER 14VQFN

Price：1+

￥2.20

Brand：Infineon

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 14MLPQ

Price：1+

￥2.75

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

packing

TR

TR,CT

TR,CT,bulk

series

Part status

On sale

Voltage - Supply

10V ~ 20V

working temperature

-40°C ~ 125°C(TA)

-40°C ~ 150°C(TJ)

Encapsulation/Housing

14-VFQFN Exposed Pad

Drive configuration

half-bridge

Channel type

Stand alone

synchronization

Number of drives

1

2

Grid type

IGBT,N Channel MOSFET

Logic voltage - VIL, VIH

0.8V,2.5V

Current peak output (in, out)

290mA,600mA

Input Type

Non-inverting

CMOS

High voltage side voltage - maximum (bootstrap)

200 V

Rise/fall time (typical value)

70ns,30ns

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