8-WDFN Exposed Padlow sideN Channel MOSFET--Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q100

Part status

stop production

Not applicable to new design

Voltage - Supply

4V ~ 15V

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

8-WDFN Exposed Pad

Drive configuration

low side

Channel type

Stand alone

Number of drives

2

Grid type

N Channel MOSFET

Logic voltage - VIL, VIH

-

Current peak output (in, out)

4A,4A

Input Type

Phase reversal Non-inverting

High voltage side voltage - maximum (bootstrap)

-

Rise/fall time (typical value)

32ns,26ns