-40°C ~ 125°C(TJ)N Channel MOSFEThalf-bridge-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

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Gate driver

Total: 7

NCV51513ABMNTWG

Store: ShenZhen/Hongkong

Description：130V, 2.5/3.0A HIGH AND LOW SIDE

Price：1+

￥1.12

NCP51513ABMNTWG

Store: ShenZhen/Hongkong

Description：130V, 2.5/3.0A HIGH AND LOW SIDE

Price：1+

￥1.02

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8SOIC

Price：1+

￥1.37

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8SOIC

Price：1+

￥30.00

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8SOIC

Price：1+

￥6.72

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 8SOIC

Price：1+

￥3.77

Store: ShenZhen/Hongkong

Description：IC GATE DRVR HALF-BRIDGE 10MLP

Price：1+

￥16.38

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

Surface mount,Wettable wings

packing

TR

TR,CT

TR,CT,bulk

TR,TR,CT,bulk

series

Automotive, AEC-Q100

Part status

On sale

Not applicable to new design

Voltage - Supply

8V ~ 16V

9V ~ 18V

8V ~ 20V

8V ~ 19V

working temperature

-40°C ~ 125°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

10-VFDFN Exposed Pad

10-WDFN Exposed Pad

Drive configuration

half-bridge

Channel type

Stand alone

synchronization

Number of drives

2

Grid type

N Channel MOSFET

Logic voltage - VIL, VIH

-

0.8V,2.3V

1.2V,2.5V

1.3V,2.5V

Current peak output (in, out)

3A,6A

2A,3A

4.3A,4.3A

500mA,1A

Input Type

Non-inverting

Phase reversal Non-inverting

High voltage side voltage - maximum (bootstrap)

600 V

118 V

150 V

Rise/fall time (typical value)

6ns,4ns

40ns,20ns

12ns,12ns

9ns,7ns

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