TRHigh pressure sideand Low voltage side-Gate driver[Parameters, quotations, pictures, datasheet]-ICQQG

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Gate driver

Total: 6

Store: ShenZhen/Hongkong

Description：INTEGRATED DRIVER & MOSFET

Price：1+

￥5.71

Store: ShenZhen/Hongkong

Description：INTEGRATED DRIVER & MOSFET

Price：1+

￥14.91

Store: ShenZhen/Hongkong

Description：INTEGRATED DRIVER & MOSFFET

Price：1+

￥3.27

Store: ShenZhen/Hongkong

Description：HIGH PERFORMANCE DUAL MOSFET GAT

Price：1+

￥1.97

NCP302155AMNTWG

Store: ShenZhen/Hongkong

Description：INT DRIVER AND MOSFET

Price：1+

￥1.85

Store: ShenZhen/Hongkong

Description：ISOLATED HIGH CURRENT GATE DRIVE

Price：1+

￥1.25

Brand

TI

ON

Microchip

ST

Infineon

ADI

Installation type

Surface mount

packing

TR

series

Part status

On sale

Voltage - Supply

4.5V ~ 5.5V

8.5V ~ 20V

7V ~ 20V

working temperature

-40°C ~ 125°C(TA)

-40°C ~ 140°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

31-PowerWFQFN

39-PowerVFQFN

9-WDFN Exposed Pad

39-PowerWFQFN

Drive configuration

High pressure sideand Low voltage side

Channel type

one way

Number of drives

1

2

Grid type

N Channel MOSFET

IGBT,N Channel MOSFET

Logic voltage - VIL, VIH

0.7V,2.65V

0.8V,2.7V

0.75V,4.3V

0.85V,2.35V

0.85V,2.3V

Current peak output (in, out)

7.8A,6.8A

4A,4A

2A,2.5A

80A,80A

Input Type

Non-inverting

Anticorrelation

High voltage side voltage - maximum (bootstrap)

-

200 V

40 V

32 V

Rise/fall time (typical value)

9.2ns,7.9ns

12ns,6ns

17ns,26ns

8ns,7ns

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