-8mA,8mANAND GATEfSV-Grid and inverter[Parameters, quotations, pictures, datasheet]-ICQQG

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Grid and inverter

Total: 1

Brand：Toshiba

Store: ShenZhen/Hongkong

Brand

TI

ON

ST

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

TC7SH

Part status

stop production

Voltage - Supply

2V ~ 5.5V

working temperature

-40°C ~ 85°C

Encapsulation/Housing

fSV

characteristic

-

Number of circuits

1

Logical Type

NAND GATE

Number of inputs

2

Current - static (maximum)

2 µA

Current - Output high, low

8mA,8mA

Logic level - low

0.5V

Logic level - high

1.5V

Maximum propagation delay at different V and maximum CL

7.5ns @ 5V,50pF

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