TRNAND GATE2V4.8mA,4.8mA23ns @ 5V,50pF-Grid and inverter[Parameters, quotations, pictures, datasheet]-ICQQG

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Grid and inverter

Total: 1

Store: ShenZhen/Hongkong

Brand

TI

ON

ST

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

74HCT

Part status

stop production

Voltage - Supply

4.5V ~ 5.5V

working temperature

-40°C ~ 85°C

Encapsulation/Housing

14-SOP

characteristic

-

Number of circuits

4

Logical Type

NAND GATE

Number of inputs

2

Current - static (maximum)

1 µA

Current - Output high, low

4.8mA,4.8mA

Logic level - low

0.8V

Logic level - high

2V

Maximum propagation delay at different V and maximum CL

23ns @ 5V,50pF

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