SiCFET(silicon carbide)208W(Tc)+20V,-5V-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 2

SCTWA35N65G2VAG

Store: ShenZhen/Hongkong

Description：SICFET N-CH 650V 45A TO247

Store: ShenZhen/Hongkong

Description：TRANS SJT N-CH 650V 45A TO247

Price：1+

￥25.05

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+20V,-5V

FET function

-

Power dissipation (maximum)

208W(Tc)

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