SiCFET(silicon carbide)300W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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IMBG120R030M1HXTMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：SICFET N-CH 1.2KV 56A TO263

Price：1+

￥32.58

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+18V,-15V

FET function

standard

Power dissipation (maximum)

300W(Tc)

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