SiCFET(silicon carbide)360W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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Total: 1

SCTH100N65G2-7AG

Store: ShenZhen/Hongkong

Description：SICFET N-CH 650V 95A H2PAK-7

Price：1+

￥48.99

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+22V,-10V

FET function

-

Power dissipation (maximum)

360W(Tc)

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