SiCFET(silicon carbide)150W(Tc)+23V,-7V-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 3

IMZ120R060M1HXKSA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：SICFET N-CH 1.2KV 36A TO247-4

Price：1+

￥19.70

AIMW120R060M1HXKSA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：1200V COOLSIC MOSFET PG-TO247-3

Price：1+

￥23.16

IMW120R060M1HXKSA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：SICFET N-CH 1.2KV 36A TO247-3

Price：1+

￥18.30

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+23V,-7V

FET function

-

Power dissipation (maximum)

150W(Tc)

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