stop productionMOSFET(Metal oxide)±30V3.13W(Ta),417W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

FQI27N25TU-F085

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 250V 25.5A I2PAK

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±30V

FET function

-

Power dissipation (maximum)

3.13W(Ta),417W(Tc)

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