MOSFET(Metal oxide)N channels±10V234W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 3

BUK9E4R9-60E,127

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 60V 100A I2PAK

Price：1+

￥0.79

BUK9E3R2-40E,127

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 40V 100A I2PAK

Price：1+

￥0.79

BUK953R2-40E,127

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 40V 100A TO220AB

Price：1+

￥0.79

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±10V

FET function

-

Power dissipation (maximum)

234W(Tc)

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