MOSFET(Metal oxide)±10V357W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

BUK961R4-30E,118

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 30V 120A D2PAK

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±10V

FET function

-

Power dissipation (maximum)

357W(Tc)

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