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MOSFET

Total: 2

IMZA120R007M1HXKSA1
Brand：Infineon
Stock：66490
Store: ShenZhen/Hongkong
Description：SIC DISCRETE
Offer
Price：1+
￥120.26
IMW120R007M1HXKSA1
Brand：Infineon
Stock：30665
Store: ShenZhen/Hongkong
Description：SIC DISCRETE
Offer
Price：1+
￥118.19
Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+20V,-5V

FET function

-

Power dissipation (maximum)

750W(Tc)

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