-N channels62.5W(Tc)-10V-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

IGLD60R190D1AUMA1

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 600V 10A LSON-8

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

-10V

FET function

-

Power dissipation (maximum)

62.5W(Tc)

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