MOSFET(Metal oxide)P channels-±12V-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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Store: ShenZhen/Hongkong

Description：MOSFET P-CH 20V 4.8A 6TSOP

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

P channels

Vgs (max)

±12V

FET function

-

Power dissipation (maximum)

2.2W(Tc)

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