MOSFET(Metal oxide)-±30V2.5W(Ta),24W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

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Store: ShenZhen/Hongkong

Description：MOSFET P-CH 60V 5.3A DPAK

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

P channels

Vgs (max)

±30V

FET function

-

Power dissipation (maximum)

2.5W(Ta),24W(Tc)

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