stop production-N channels2.8W(Ta),150W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

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Store: ShenZhen/Hongkong

Description：MOSFET N-CH 650V 3.2A PWRFLAT88

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±25V

FET function

-

Power dissipation (maximum)

2.8W(Ta),150W(Tc)

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