-600mW(Ta)+10V,-20V-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

Brand：Toshiba

Store: ShenZhen/Hongkong

Description：SMOS LOW RON VDS:-60V VGSS:+10/-

Price：1+

￥0.57

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

MOSFET(Metal oxide)

FET Type

P channels

Vgs (max)

+10V,-20V

FET function

-

Power dissipation (maximum)

600mW(Ta)

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