Total: 1441
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
To be produced
-
MOSFET(Metal oxide)
SiCFET(silicon carbide)
SiC(Silicon carbide bonded crystal tube)
P channels
N channels
±20V
±30V
+23V,-10V
±25V
±12V
±16V
±8V
±15V
±6V
±35V
depletion mode
Grade knot
Schottky diode (isolated)
Schottky diode
standard