Total: 32
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
SiC(Silicon carbide bonded crystal tube)
N channels
±20V
+25V,-10V
±30V
+23V,-10V
+22V,-8V
-
500W(Tc)