On saleSiC(Silicon carbide bonded crystal tube)283W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

Brand：Microchip

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 700V TO247

Price：1+

￥17.56

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiC(Silicon carbide bonded crystal tube)

FET Type

N channels

Vgs (max)

+25V,-10V

FET function

-

Power dissipation (maximum)

283W(Tc)

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