SiCFET(silicon carbide)170W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

NTH4L080N120SC1

Store: ShenZhen/Hongkong

Description：SICFET N-CH 1200V 29A TO247-4

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiCFET(silicon carbide)

FET Type

N channels

Vgs (max)

+25V,-15V

FET function

-

Power dissipation (maximum)

170W(Tc)

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