Total: 190
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiCFET(silicon carbide)
P channels
N channels
±20V
±30V
±25V
±16V
+22V,-10V
±15V
+20V,-16V
-
250W(Tc)