Total: 36
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
SiC(Silicon carbide bonded crystal tube)
GaNFET(Gallium nitride)
N channels
±20V
±30V
±10V
+10V,-8V
±16V
±18V
+22V,-10V
-
96W(Tc)