On saleSiC(Silicon carbide bonded crystal tube)176W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

NTH4L060N065SC1

Store: ShenZhen/Hongkong

Description：SIC MOS TO247-4L 650V

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

SiC(Silicon carbide bonded crystal tube)

FET Type

N channels

Vgs (max)

+22V,-8V

FET function

-

Power dissipation (maximum)

176W(Tc)

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