MOSFET(Metal oxide)N channels±30V214W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

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Store: ShenZhen/Hongkong

Description：MOSFET N-CH 200V 30A TO220AB

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

stop production

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±30V

FET function

-

Power dissipation (maximum)

214W(Tc)

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