Total: 91
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
P channels
N channels
±20V
±30V
±10V
±25V
±12V
±16V
±8V
±9V
-
Schottky diode (isolated)
800mW(Ta)