Total: 150
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
Final sale
stop production
Not applicable to new design
MOSFET(Metal oxide)
P channels
N channels
±20V
±10V
-
±12V
±8V
±6V
Schottky diode (isolated)
700mW(Ta)