Total: 8
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
On sale
stop production
MOSFET(Metal oxide)
SiCFET(silicon carbide)
SiC(Silicon carbide bonded crystal tube)
N channels
±20V
±30V
+25V,-15V
+25,-15V
-
178W(Tc)