1.1W(Tj)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

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Store: ShenZhen/Hongkong

Description：MOSFET P-CH 20V 2.2A CHIPFET

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

MOSFET(Metal oxide)

FET Type

P channels

Vgs (max)

±12V

FET function

Schottky diode (isolated)

Power dissipation (maximum)

1.1W(Tj)

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