N channels±30V3.13W(Ta),72W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

IRFW630BTM-FP001

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 200V 9A D2PAK

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

Not applicable to new design

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±30V

FET function

-

Power dissipation (maximum)

3.13W(Ta),72W(Tc)

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