MOSFET(Metal oxide)N channels±30V417W(Tj)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

Total: 1

FQB27N25TM-F085P

Store: ShenZhen/Hongkong

Description：250V, 26A, 108M, D2PAKN-CHANNEL

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±30V

FET function

-

Power dissipation (maximum)

417W(Tj)

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