MOSFET(Metal oxide)N channels1.2W(Ta),139W(Tc)-MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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MOSFET

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DMT10H010LPS-13

Store: ShenZhen/Hongkong

Description：MOSFET N-CH 100V 9.4A PWRDI5060

Price：1+

￥2.15

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Part status

On sale

technology

MOSFET(Metal oxide)

FET Type

N channels

Vgs (max)

±20V

FET function

-

Power dissipation (maximum)

1.2W(Ta),139W(Tc)

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