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DDR

Total: 6

MT46V128M4CY-5B:J TR
Brand：Micron
Stock：15805
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V128M4CY-5B:J
Brand：Micron
Stock：17568
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V128M4P-5B:J
Brand：Micron
Stock：15721
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
MT46V128M4TG-5B:F
Brand：Micron
Stock：15310
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
MT46V128M4BN-5B:F
Brand：Micron
Stock：10250
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V128M4P-5B:F
Brand：Micron
Stock：17709
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Flash Memory

Installation type

Surface mount

packing

pallet

TR

Memory type

FLASH - NAND(SLC)

Volatile

storage capacity

512Mb(128M x 4)

64Mb(16M x 4)

Voltage - Supply

2.3V ~ 2.7V

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

66-TSSOP (0,400,10,16mm)

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