Surface mount60-TFBGAFLASH,RAM0°C ~ 70°C(TA)2.5V ~ 2.7V-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 2

MT46V128M4CY-5B:J TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

MT46V128M4BN-5B:F TR

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 60FBGA

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

FLASH,RAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

512Mb(128M x 4)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

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