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DDR

Total: 8

MT46V64M4P-5B:M
Brand：Micron
Stock：18222
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V64M4P-5B:K
Brand：Micron
Stock：14898
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V32M16P-5B:J
Brand：Micron
Stock：30
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
Price：1+
￥5.85
MT46V16M16P-5B:M
Brand：Micron
Stock：30
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
Price：1+
￥6.60
MT46V64M4P-5B:G TR
Brand：Micron
Stock：18228
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V64M4P-5B:G
Brand：Micron
Stock：17156
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V64M4TG-5B:G TR
Brand：Micron
Stock：10121
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
MT46V32M8TG-5B:G TR
Brand：Micron
Stock：12583
Store: ShenZhen/Hongkong
Description：IC DRAM 256MBIT PARALLEL 66TSOP
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

bulk

pallet

TR

TR,CT

Memory type

Volatile

storage capacity

256Mb(16M x 16)

256Mb(32M x 8)

256Mb(64M x 4)

512Mb(32M x 16)

Voltage - Supply

2.7V ~ 3.6V

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

84-FBGA

107-TFBGA,CSPBGA

66-TSSOP (0,400,10,16mm)

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