bulkVolatile-40°C ~ 85°C(TA)66-TSSOP (0,400,10,16mm)-DDR[Parameters, quotations, pictures, datasheet]-ICQQG

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DDR

Total: 5

MT46V64M8P-5B AIT:J

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 66TSOP

MT46V32M16P-5B AIT:J

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 66TSOP

MT46V16M16P-5B AIT:M

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

Price：1+

￥52.88

MT46V64M8TG-5B IT:J

Store: ShenZhen/Hongkong

Description：IC DRAM 512MBIT PARALLEL 66TSOP

MT46V16M16P-5B IT:M

Store: ShenZhen/Hongkong

Description：IC DRAM 256MBIT PARALLEL 66TSOP

Price：1+

￥7.84

Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

bulk

Memory type

Volatile

storage capacity

256Mb(16M x 16)

512Mb(32M x 16)

512Mb(64M x 8)

64Mb(8M x 8,4M x 16)

Voltage - Supply

2.3V ~ 2.7V

2.5V ~ 2.7V

working temperature

-40°C ~ 85°C(TA)

Encapsulation/Housing

169-LFBGA

153-WFBGA

169-WFBGA

66-TSSOP (0,400,10,16mm)

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