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DDR

Total: 7

MT46V128M4CY-5B:J TR
Brand：Micron
Stock：15805
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V128M4P-5B:J TR
Brand：Micron
Stock：17135
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
MT46V128M4P-5B:D TR
Brand：Micron
Stock：13121
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
MT46V128M4TG-5B:F TR
Brand：Micron
Stock：11631
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
MT46V128M4FN-5B:F TR
Brand：Micron
Stock：15090
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V128M4BN-5B:F TR
Brand：Micron
Stock：12096
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 60FBGA
Offer
MT46V128M4P-5B:F TR
Brand：Micron
Stock：17783
Store: ShenZhen/Hongkong
Description：IC DRAM 512MBIT PARALLEL 66TSOP
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

FLASH,RAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

512Mb(128M x 4)

1Mb(128K x 8)

128Gb(16G x 8)

Voltage - Supply

2.5V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

60-TFBGA

132-LBGA

149-WFBGA

66-TSSOP (0,400,10,16mm)

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