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DDR

Total: 4

MT46V256M4TG-75:A TR
Brand：Micron
Stock：16355
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 66TSOP
Offer
MT46V256M4TG-6T:A TR
Brand：Micron
Stock：17682
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 66TSOP
Offer
MT46V256M4P-75:A TR
Brand：Micron
Stock：19154
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 66TSOP
Offer
MT46V256M4P-6T:A TR
Brand：Micron
Stock：17638
Store: ShenZhen/Hongkong
Description：IC DRAM 1GBIT PARALLEL 66TSOP
Offer
Brand

Samsung

Micron

Hynix

Winbond

nanya

ELPIDA

Etron

ISSI

ProMOS

Alliance Memory

Zentel

Memory format

DRAM

Installation type

Surface mount

packing

TR

Memory type

Volatile

storage capacity

1Gb(256M x 4)

4Gb(128M x 32)(NAND),4G(128M x 32)(LPDDR2)

4Gb(256M x 16)(NAND),4G(128M x 32)(LPDDR2)

Voltage - Supply

2.3V ~ 2.7V

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

66-TSSOP (0,400,10,16mm)

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